February 22, 2005

Toshiba Matsushita Display Announces Construction of Low-temperature Polysilicon Factory

Toshiba Matsushita Display Technology Co.,Ltd. will construct a new low-temperature polysilicon(p-Si) factory on the Ishikawa Factory’s (Nomi-gun, Ishikawa Prefecture) site. By the nearly 50 billion yen investment in the facilities including buildings, facilities for development and manufacturing, Toshiba Matsushita Display Technology aim for fab`s completion on December 2005 and manufacturing operation from April 2006. Also, it is arranged that the expansion of the capacities fitting the customers' needs in a phased manner, and the establishment of manufacturing system with production over 10 million units (equivalent to 2.2-inch for cellular phone) per month including from existing lines.

The small and medium-sized TFT-LCD market, strong growth will be expected such as cellular phone and automobile use. Having world highest level technologies in low-temperature p-Si-LCDs products, we think that our mission is preparing for the capacity to provide the high value-added p-Si-LCD timely and steadily along with responding to a variety of customers` expectations and satisfactions. Therefore, as the third low-temperature p-Si operating base followed by Fukaya (Fukaya-shi, Saitama Pref.) and AFPD in Singapore, Toshiba Matsushita Display Technology reached the decision for the investment.

The new factory line handles 730mmx920mmx0.5mmt (4th generation, thinner substrate) glass substrates and the capacity of production will be 5.5 million units per month (equivalent to 2.2-inch for cellular phone). Furthermore, it produces high valued added products adopting differentiated advanced technologies, such as “SOG (System On Glass) technology” for the integrated circuits in the crystal display panel, able to integrate additional functions and OCB (Optically Compensated Bend) technology having the industry highest standard picture qualities, with the wide viewing angle and high response speed even under low temperature.

By this construction of the new factory, “SOG operating base”, Toshiba Matsushita Display Technology eliminate IC purchasing lead-time by the integration of IC functions onto the glass substrate, reduction of production lead-time by cutting the low-temperature p-Si array process, enhancing credibility on products reliability by reduction for connecting points to the outer circuit. And, Toshiba Matsushita Display Technology would like to provide additional values by our premium SOG technology and contribute further to customers.

New Factory Outline
Address	Yamada Sende 26-2, Kawakita-machi Aza, Nomi gun, Ishikawa (on our Ishikawa factory site)
Building structure	steel framing, 3 floors
Total floor area	33,660m2
Construction work starting	May 2005
Operation time	April 2006
Substrate size	730x920x0.5(mm) - 4th generation thin substrate
Capacity (Input base)	20kSheets/month Approx. 5.5 million units/month(equivalent to 2.2-inch)

Information in the press releases, including product prices and specifications, content of services and contact information, is current on the date of the press announcement,but is subject to change without prior notice.